Inchange Semiconductor 2SD1345
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD1345 |
|---|---|
| Datasheet | 2SD1345 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Switching Time●Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@IC= 4A
●Wide Area of Safe Operation
●Complement to Type 2SB983
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Inverters, converters●Controllers for DC motor, pulse motor
●Switching power supplies
●General power applications
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 12 A IB Base Current-Continuous 1.5 A IBM Base Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 3.1 UNIT ℃/W 2SD1345 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless...