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2SD1406 - NPN Transistor

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Description

Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 3A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) Complement to Type 2SB1015 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency p

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Datasheet Details

Part number 2SD1406
Manufacturer INCHANGE
File Size 211.89 KB
Description NPN Transistor
Datasheet download datasheet 2SD1406 Datasheet
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isc Silicon NPN Power Transistor 2SD1406 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·Complement to Type 2SB1015 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.5 A 25 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
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