• Part: 2SD1406
  • Description: Silicon NPN Transistor
  • Manufacturer: Toshiba
  • Size: 92.67 KB
Download 2SD1406 Datasheet PDF
2SD1406 page 2
Page 2

Datasheet Summary

SILICON NPN TRIPLE DIFFUSED TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm Features . High DC Current Gain : hpE=300(Max. ) (V CE=5V, I c=0 - 5A) . Low Saturation Voltage ' VCE (sat)=l-0V(Max.)(I c=3A, I B=0.3A) . High Power Dissipation : Pc=25W (Tc=25°C) . plementary to 2SB1015 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25°C Tc=25°C SYMBOL [ RATING VcBO 60 v CEO VeBO 7 ic 2.0 ?C UNIT V V V A A Junction Temperature Storage Temperature Range T.i °C T...