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2SD1409A
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD1409A
High Voltage Switching Applications
Industrial Applications Unit: mm • •
High DC current gain: hFE = 600 (min.) (VCE = 2 V, IC = 2 A) Monolithic construction with built-in base-emitter shunt resistor
Absolute Maximum Ratings (Ta = 25°C)
Characteristics S Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C ymbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 600 400 5 6 1 2.0 25 150 −55 to 150 Unit V V V A A W °C °C
JEDEC JEITA
― SC-67
TOSHIBA 2-10R1A Note1: Using continuously under heavy loads (e.g.
2SD1409A Datasheet
