Datasheet Details
| Part number | 2SD1403 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.00 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1403-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1403 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.00 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1403-INCHANGE.pdf |
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·High Breakdown Voltage ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of colour TV receivers.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 16 A 120 W 150 ℃ Tstg Storage Temperature Range -55-150 ℃ 2SD1403 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
Compare 2SD1403 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1403 | NPN Triple Diffused Planar Silicon Transistor | Sanyo |
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2SD1403 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD1400 | NPN Transistor |
| 2SD1402 | NPN Transistor |
| 2SD1404 | Silicon NPN Power Transistor |
| 2SD1405 | NPN Transistor |
| 2SD1406 | NPN Transistor |
| 2SD1407 | NPN Transistor |
| 2SD1408 | NPN Transistor |
| 2SD1409 | NPN Transistor |
| 2SD1409A | NPN Transistor |
| 2SD1410 | Silicon NPN Darlington Power Transistor |