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2SD1409A - NPN Transistor

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High collector-emitter breakdown voltage- : V(BR)CEO= 400V(Min) High DC current Gain : hFE= 600(Min) @ IC= 2A, VCE= 2V Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Igniter applications High voltage switching applications A

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Datasheet Details

Part number 2SD1409A
Manufacturer INCHANGE
File Size 187.13 KB
Description NPN Transistor
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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1409A DESCRIPTION ·High collector-emitter breakdown voltage- : V(BR)CEO= 400V(Min) ·High DC current Gain : hFE= 600(Min) @ IC= 2A, VCE= 2V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Igniter applications ·High voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 2 W 25 150 ℃ Tstg Storage Temperature Range
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