2SD1409
Description
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) High DC Current Gain : hFE= 600(Min) @ IC= 2A, VCE= 2V Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Part: 2SD1409
- Description: NPN Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 209.31 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SD1403 | Wing Shing Computer Components | Silicon Diffused Power Transistor |