Datasheet Summary
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
DESCRIPTION
- High DC Current Gain
: hFE= 200(Min) @IC= 0.5A
- Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max.)@ IC= 1A
- Collector Power Dissipation of 25W@ TC=25℃
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for audio frequency power amplifier...
