High DC Current Gain
: hFE= 200(Min) @IC= 0.5A
Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max.)@ IC= 1A
Collector Power Dissipation of 25W@ TC=25℃
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio frequ
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1405
DESCRIPTION ·High DC Current Gain
: hFE= 200(Min) @IC= 0.5A ·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max.)@ IC= 1A ·Collector Power Dissipation of 25W@ TC=25℃ ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.5
A
25
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.
2SD1405 Datasheet
