Datasheet Details
| Part number | 2SD1405 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.45 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1405-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1405.
| Part number | 2SD1405 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.45 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1405-INCHANGE.pdf |
|
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·High DC Current Gain : hFE= 200(Min) @IC= 0.5A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 1A ·Collector Power Dissipation of 25W@ TC=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1405 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1405 | Silicon NPN Transistor | Toshiba |
| Part Number | Description |
|---|---|
| 2SD1400 | NPN Transistor |
| 2SD1402 | NPN Transistor |
| 2SD1403 | NPN Transistor |
| 2SD1404 | Silicon NPN Power Transistor |
| 2SD1406 | NPN Transistor |
| 2SD1407 | NPN Transistor |
| 2SD1408 | NPN Transistor |
| 2SD1409 | NPN Transistor |
| 2SD1409A | NPN Transistor |
| 2SD1410 | Silicon NPN Darlington Power Transistor |