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2SD1405 - Silicon NPN Transistor

Key Features

  • . High DC Current Gain of 200 to 1200 at VC E=5V, I C=0.5A . Low V CE ( sat ) of 1.0V (Max. ) at Ic=lA, I B=0.02A . Collector Power Dissipation of 25W at Tc=25 C Unit in mm 10:3 MAX. j -r 7.0 . -rr ^ "/ k 03.2±O.2 s CO V X C5 aH o.

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Datasheet Details

Part number 2SD1405
Manufacturer Toshiba
File Size 93.78 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD1405 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: —— A SILICON NPN TRIPLE DIFFUSED TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES . High DC Current Gain of 200 to 1200 at VC E=5V, I C=0.5A . Low V CE ( sat ) of 1.0V (Max.) at Ic=lA, I B=0.02A . Collector Power Dissipation of 25W at Tc=25 C Unit in mm 10:3 MAX. j -r 7.0 . -rr ^ "/ k 03.2±O.2 s CO V X C5 aH o << • 3 to MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL VcBO v CE0 VEBO ic RATING 50 50 UNIT 1 1 1.4 ii +0.25 0.76-0.15 , 2.5 4±0.25 i . 1.2 i 2.54 ± a 25 + 1 12 3' Base Current IB 0.5 Collector Power Ta=25 C 2.0 Dissipation Tc=25°C 25 Junction Temperature 150 1. BASE 2. COLLECTOR 3.