D1409 Overview
Description
With TO-220Fa package - High DC current gain - DARLINGTON APPLICATIONS - Igniter applications - High volitage switching applications PINNING PIN DE 1 2 3 Base Collector Emitter SCRIPTION SYMBOL P VCBO VCEO VEBO IC IB ARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2.0 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 600 400 5 6 1 25 W UNIT V V V A A 1 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1409 CHARACTERISTICS Tj=25 u nless otherwise specified ARAMETER Collector-emitter breakdown voltage ollector-emitter saturation voltage ase-emitter saturation voltage Emitter-collector diode forward voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance CONDITIONS IC=10mA; IB=0 400 IC=4A ;IB=0.04A IC=4A ;IB=0.04A IE=4A; IB=0 VCB=600V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=2V 600 IC=4A ; VCE=2V 100 f=1MHz ; VCB=50V;IE=0 35 pF 2.0 2.5 3.0 0.5 3 MIN TYP. MAX UNIT V V V V mA mA SYMBOL P V(BR)CEO VCEsat C VBEsat B VECF ICBO IEBO hFE-1 hFE-2 COB Switching times ton T tstg tf urn-on time Storage time Fall time IB1=-IB2=0.04A VCC=100V ,RL=25@ 1 8 5 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1409 Fig.2 outline dimensions (unindicated tolerance:±0.15 mm) 3.
