SILICON NPN TRIPLE DIFFUSED TYPE
POWER AMPLIFIER APPLICATIONS.
FEATURES . High Power Dissipation : Pc= ?5W (Tc=25 °C) . Good Linearity of hEE . Complementary to 2SB1017
. Recommended for 20— 25W High Fidelity Audio Frequency
Amplifier Output Stage.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL VCBO VcEO v EBO ic IB PC
T
j
T stg
RATING 80 80
5 4
0.4 25
150
-55^150
UNIT V V V A A W
°C °C
Unit in mm
10.3MAX,.
r^ 03.2±O.2
J j
I"ri A n
i)
:::
r5
N
1
1.4
+ 0.25 0.76-0.15
2.54±a25
1.2 m
g
IIt
:
2.54±0.25
mo
cicj
-H
in
-1
r
It
1
1-
n i
3 >,
X!
<
D1408 Datasheet
