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SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
IGNITER APPLICATIONS.
HIGH VOLTAGE SWITCHING APPLICATIONS.
FEATURES . High DC Current Gain : hFE=600(Min. ) ( V CE=2V, I C=2A) . Monolithic Construction with Built-in 3ase-Emitter
Shunt Resistor.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage
SYMBOL VCBO VCEO
RATING 600 400
UNIT V V
INDUSTRIAL APPLICATIONS Unit in mm
10.3MAX.
7.0 03.2±O.2
/
J-r~ J
wJrf rt
C5
H
o
r-'
to
1
* 1.4 ,1 + 0.25
Q76-ai5
1.2
z M S
::: N
Emitter-Base Voltage
VEBO
5
Collector Current
ic 6
Base Current
Collector Power Dissipation
u
Ta=25 C
u
Tc=25 C
IB pC
1
2.0 25
Junction Temperature
Ti 150
Storage Temperature Range
Tstg
-55-150
EQUIVALENT CIRCUIT
BAS
Ki k.
2SD1409 Datasheet
