• Part: 2SD1409
  • Description: Silicon NPN Transistor
  • Manufacturer: Toshiba
  • Size: 91.70 KB
Download 2SD1409 Datasheet PDF
2SD1409 page 2
Page 2

Datasheet Summary

: SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. Features . High DC Current Gain : hFE=600(Min. ) ( V CE=2V, I C=2A) . Monolithic Construction with Built-in 3ase-Emitter Shunt Resistor. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage SYMBOL VCBO VCEO RATING 600 400 UNIT V V INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. 7.0 03.2±O.2 / J-r~ J wJrf rt C5 H o r-' to - 1.4 ,1 + 0.25 Q76-ai5 1.2 z M S ::: N Emitter-Base Voltage VEBO Collector Current ic 6 Base Current Collector Power Dissipation u Ta=25 C u Tc=25...