Datasheet Details
| Part number | 2SD1402 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.54 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1402-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SD1402.
| Part number | 2SD1402 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.54 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1402-INCHANGE.pdf |
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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 5 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 16 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1402 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD1400 | NPN Transistor |
| 2SD1403 | NPN Transistor |
| 2SD1404 | Silicon NPN Power Transistor |
| 2SD1405 | NPN Transistor |
| 2SD1406 | NPN Transistor |
| 2SD1407 | NPN Transistor |
| 2SD1408 | NPN Transistor |
| 2SD1409 | NPN Transistor |
| 2SD1409A | NPN Transistor |
| 2SD1410 | Silicon NPN Darlington Power Transistor |