Datasheet Summary
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SILICON NPN TRIPLE DIFFUSED TYPE
POWER AMPLIFIER APPLICATIONS.
Features
. High Breakdown Voltage : Vqeo=100V . Low Collector Saturation Voltage : VcE(sat) =2
- 0V(Max. . plementary to 2SB1016 . Remended for 30W High Fidelity Audio Frequency
Amplifier Output Stage.
Unit in mm
10.3MAX. j#3.2±0.2
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL VCBO v CEO VEBO ic IB stg
RATING 100 100
0.5 30
-55~150
UNIT
1. BASE 2. COLLECTOR 3. EMITTER
JEDEC
EIAJ
TOSHIBA
2-10L1A
Weight : 2.1g
ELECTRICAL...
