2SD1407 - Silicon NPN Transistor

Toshiba

Key Features

. High Breakdown Voltage : Vqeo=100V . Low Collector Saturation Voltage : VcE(sat) =2 - 0V(Max. . Complementary to 2SB1016 . Recommended for 30W High Fidelity Audio Frequency Amplifier Output Stage. Unit in mm 10.3MAX. j#3.2±0.2.

2SD1407 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SD1407
Manufacturer	Toshiba
File Size	79.25 KB
Description	Silicon NPN Transistor
Datasheet	2SD1407 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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:) SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES . High Breakdown Voltage : Vqeo=100V . Low Collector Saturation Voltage : VcE(sat) =2 - 0V(Max. . Complementary to 2SB1016 . Recommended for 30W High Fidelity Audio Frequency Amplifier Output Stage. Unit in mm 10.3MAX. j#3.2±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO VEBO ic IB stg RATING 100 100 0.5 30 150 -55~150 UNIT 1. BASE 2. COLLECTOR 3. EMITTER JEDEC EIAJ TOSHIBA 2-10L1A Weight : 2.