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2SD1407 - NPN Transistor

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Description

Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@ IC= 4A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) Complement to Type 2SB1016 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier

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Datasheet Details

Part number 2SD1407
Manufacturer INCHANGE
File Size 206.45 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor 2SD1407 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Complement to Type 2SB1016 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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