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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD1407A
2SD1407A
Power Amplifier Applications
Industrial Applications Unit: mm
• High breakdown voltage: VCEO = 100 V • Low collector saturation voltage: VCE (sat) = 2.0 V (max) • Complementary to 2SB1016A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 100 V
Collector-emitter voltage
VCEO 100 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 5 A
Base current
IB 0.5 A
Collector power dissipation (Tc = 25°C)
PC 30 W
JEDEC
―
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEITA TOSHIBA
― 2-10R1A
Note: Using continuously under heavy loads (e.g.
2SD1407A Datasheet
