Datasheet Summary
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Power Amplifier Applications
Industrial Applications Unit: mm
- High breakdown voltage: VCEO = 100 V
- Low collector saturation voltage: VCE (sat) = 2.0 V (max)
- plementary to...
| Manufacturer | Part Number | Description |
|---|---|---|
Toshiba |
2SD1407 | Silicon NPN Transistor |
Inchange Semiconductor |
2SD1407 | NPN Transistor |
SavantIC |
2SD1407 | SILICON POWER TRANSISTOR |