2SD1405 Datasheet and Specifications PDF

The 2SD1405 is a NPN Transistor.

Key Specifications

Mount TypeThrough Hole
Part Number2SD1405 Datasheet
ManufacturerInchange Semiconductor
Overview ·High DC Current Gain : hFE= 200(Min) @IC= 0.5A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 1A ·Collector Power Dissipation of 25W@ TC=25℃ ·Minimum Lot-to-Lot variations for robust d. S MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 50 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.02A 1.0 V VBE(on) Base -Emitter On Voltage IC= 0.5A ; VCE= 5V 1.0 V ICBO Collector Cutoff Current VCB= 50V; IE= 0 100 μA IEBO Emitter Cut.
Part Number2SD1405 Datasheet
DescriptionSilicon NPN Transistor
ManufacturerToshiba
Overview : —— A SILICON NPN TRIPLE DIFFUSED TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES . High DC Current Gain of 200 to 1200 at VC E=5V, I C=0.5A . Low V CE ( sat ) of 1.0V (Max.) at Ic=lA. . High DC Current Gain of 200 to 1200 at VC E=5V, I C=0.5A . Low V CE ( sat ) of 1.0V (Max.) at Ic=lA, I B=0.02A . Collector Power Dissipation of 25W at Tc=25 C Unit in mm 10:3 MAX. j -r 7.0 . -rr ^ "/ k 03.2±O.2 s CO V X C5 aH o <<
* 3 to MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collecto.

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Similar Datasheets

Part Number Manufacturer Description
D1405 Toshiba 2SD1405