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2SD1503 - NPN Transistor

General Description

High Collector-Base Voltage - : VCBO= 900V(Min) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and power switching applications ABSOLUTE MAXIMUM

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isc Silicon NPN Power Transistor isc Product Specification 2SD1503 DESCRIPTION · High Collector-Base Voltage - : VCBO= 900V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 6 A 50 W 150 ℃ -65~150 ℃ isc website：www.iscsemi.