2SD1522
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 450V(Min)
- High DC Current Gain
: h FE= 500(Min) @ IC= 5A, VCE= 3V
- Fast Switching Speed
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for audio frequency power amplifier and low speed high current switching industrial applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation @Ta=25℃
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
3 W
℃
Tstg
Storage Temperature Range
-55~150 ℃ isc website：.iscsemi....
