2SD1525
DESCRIPTION
- High DC Current Gain
: h FE= 1000(Min.)@ IC= 20A
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 100V(Min.)
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
Collector Current-Continuous
Base Current- Continuous
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SD1525 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30m A, IB=...
