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2SD1525 - Silicon NPN Darlington Power Transistor

General Description

High DC Current Gain : hFE= 1000(Min.)@ IC= 20A Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high current switching applications.

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 20A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 30 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1525 isc website：www.iscsemi.