2SD1540 Overview
·High DC current gain- hFE = 800 (Min) @ IC = 0.5A ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 100V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose power amplifier and switching applications. 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD1540...