High DC current gain-
hFE = 800 (Min) @ IC = 0.5A
Collector-Emitter Breakdown Voltage-
V(BR)CEO= 100V(Min)
Fast Switching Speed
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for general purpose power amplifier and s
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INCHANGE Semiconductor
isc Silicon NPN Darlingtion Power Transistor
2SD1540
DESCRIPTION ·High DC current gain-
hFE = 800 (Min) @ IC = 0.5A ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 100V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
6
A
IB
Base Current
0.2
A
PC
Collector Power Dissipation@TC=25℃
60
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
isc website：www.iscsemi.
2SD1540 Datasheet
