Inchange Semiconductor 2SD1544
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD1544 |
|---|---|
| Datasheet | 2SD1544 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Breakdown Voltage- : VCBO= 1500V (Min)●High Switching Speed
●Low Saturation Voltage
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Color TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 3.5 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1544 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.8A ICBO Collector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current...