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2SD1550 - NPN Transistor

Datasheet Summary

Description

High Breakdown Voltage- : VCBO= 1000V (Min) High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Color TV horizontal output applications.

Switching regulator output applications.

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Datasheet Details

Part number 2SD1550
Manufacturer INCHANGE
File Size 200.50 KB
Description NPN Transistor
Datasheet download datasheet 2SD1550 Datasheet
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Full PDF Text Transcription

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isc Silicon NPN Power Transistor isc Product Specification 2SD1550 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1000V (Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal output applications. ·Switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 10 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.
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