2SD1550
DESCRIPTION
- High Breakdown Voltage-
: VCBO= 1000V (Min)
- High Switching Speed
- Low Saturation Voltage
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Color TV horizontal output applications.
- Switching regulator output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current- Continuous
Base Current- Continuous
Collector Power Dissipation @ TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150
℃ isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor isc Product Specification
ELECTRICAL CHARACTERISTICS...
