Datasheet Details
| Part number | 2SD1558 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.81 KB |
| Description | NPN Transistor |
| Download | 2SD1558 Download (PDF) |
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| Part number | 2SD1558 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.81 KB |
| Description | NPN Transistor |
| Download | 2SD1558 Download (PDF) |
|
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|
· High DC Current Gain- : hFE = 1000(Min)@ IC= 2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO VEBO IC Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous 60 V 7 V 4 A ICM Collector Current-Peak Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ Tj Junction Temperature 8 A 40 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1558 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 25mA, IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA;
IC= 0 VCE(sat) -1 Collector-Emitter Saturation Voltage IC= 2A, IB= 4mA MIN TYP.
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1558.
| Part Number | Description |
|---|---|
| 2SD155 | NPN Transistor |
| 2SD1550 | NPN Transistor |
| 2SD1551 | NPN Transistor |
| 2SD1552 | NPN Transistor |
| 2SD1553 | NPN Transistor |
| 2SD1554 | NPN Transistor |
| 2SD1555 | NPN Transistor |
| 2SD1556 | NPN Transistor |
| 2SD1559 | NPN Transistor |
| 2SD1503 | NPN Transistor |