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2SD1588 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor 2SD1588.

General Description

·Large Current Capacity- IC= 7A ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V (Min) ·Complement to Type 2SB1097 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers and low speed switching applications which is ideal for use in ramp drivers or inductance drivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 15 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 3.5 A 30 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;

2SD1588 Distributor