NEC 2SD1588
NPN Silicon Transistor
| Part No. | 2SD1588 |
|---|---|
| Datasheet | 2SD1588 Download |
| Manufacturer |  NEC |
| Description | NPN Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Mold package that does not require an insulating board or PACKAGE DRAWING (UNIT: mm) insulation bushing● Large current capacity in small dimension: IC(DC) = 7 A
● Low collector saturation voltage: VCE(sat) = 0.5 V MAX. (@5 A)
● Ideal for use in ramp drivers or inductance drivers
● Complementary transistor: 2SB1097
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (TC = 25°C) PT (TA = 25°C) Tj Tstg Ratings 100 60 7.0 7.0 15 3.5 30 2.0 150 −55 to +150 Unit V V V A A A W W °C °C (OHFWURGH &RQQHFWLRQ ! %DVH ! &ROOHFWRU ! (PLWWHU * PW ≤ 300 µs, duty cycle ≤ 10%ELECTRICAL CHARACTERISTICS
(TA = 25°C) Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain Collector saturation voltage Base saturation voltage Symbol ICBO IEBO hFE1** hFE2** VCE(sat)** VBE(sat)** Conditions VCB = 80 V, IE = 0 VEB = 5.0 V, IC = 0 VCE = 1.
