Datasheet Details
| Part number | 2SD1632 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.24 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1632-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1632 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.24 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1632-INCHANGE.pdf |
|
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·Collector-Base Breakdown Voltage- : VCBO= 1300V (Min.) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1300 V VCES Collector-Emitter Voltage 1300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 15 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.5 A 70 W 130 ℃ Tstg Storage Temperature Range -55~130 ℃ 2SD1632 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1632 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1632 | SILICON POWER TRANSISTOR | SavantIC |
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