SavantIC 2SD1632
SILICON POWER TRANSISTOR
DESCRIPTION
●With TO-3PFa package●High voltage ,high speed
●Built-in damper diode
●Wide area of safe operation
APPLICATIONS
●For horizontal deflection output applications PINNING PIN 1 2 3 Base Collector EmitterDESCRIPTION
Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VEBO IC ICM IBM PC Tj Tstg PARAMETER Collector-base voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open collector VALUE 1500 5 4 15 3.5 70 130 -55~130 UNIT V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1632 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL V(BR)EBO Emitter-base breakdown voltage IE=500mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=3A ;IB=1A 1.5 V VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 50 µA 1...