2SD1651 datasheet by Inchange Semiconductor.
| Part number | 2SD1651 |
|---|---|
| Datasheet | 2SD1651-INCHANGE.pdf |
| File Size | 210.43 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·High Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1651 | Silicon NPN Power Transistors | Savantic |
 |
2SD1651C | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD1650 | NPN Transistor |
| 2SD1652 | NPN Transistor |
| 2SD1654 | NPN Transistor |
| 2SD1655 | NPN Transistor |
| 2SD1600 | NPN Transistor |
| 2SD1607 | NPN Transistor |
| 2SD1609 | NPN Transistor |
| 2SD1619 | NPN Transistor |
| 2SD1624 | NPN Transistor |
| 2SD1632 | NPN Transistor |
