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2SD1651C - NPN Triple Diffused Planar Silicon Transistor

Key Features

  • Package Dimensions unit : mm 2174A [2SD1651C] 16.0 3.4 5.6 3.1 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 5.0 21.0 4.0 22.0 8.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pul.

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Ordering number : ENN7086 www.DataSheet4U.com 2SD1651C NPN Triple Diffused Planar Silicon Transistor 2SD1651C Color TV Horizontal Deflection Output Applications Features • • • • • Package Dimensions unit : mm 2174A [2SD1651C] 16.0 3.4 5.6 3.1 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 5.0 21.0 4.0 22.0 8.0 2.8 2.0 20.4 0.7 0.9 1 2 5.