Inchange Semiconductor 2SD1670
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD1670 |
|---|---|
| Datasheet | 2SD1670 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min)●High DC Current Gain- : hFE= 1000( Min.) @ IC= 10A
●Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 10A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●For low speed high current switching industrial use.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 3.5 W 65 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power TransistorELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 25m...