High DC Current Gain-hFE= 750(Min)@ IC= 15A
High Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for general purpose amplifier and low speed
switching applicatio
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1678
DESCRIPTION ·High DC Current Gain-hFE= 750(Min)@ IC= 15A ·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose amplifier and low speed
switching applications
ABSOLUTE
MAXIMUM
RATINGS
(T
aB
B
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCER
Collector-Emitter Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.5
A
3.
2SD1678 Datasheet
