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2SD1670 - Power Transistor

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Part number 2SD1670
Manufacturer Inchange Semiconductor
File Size 219.21 KB
Description Power Transistor
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Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) High DC Current Gain- : hFE= 1000( Min.) @ IC= 10A Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 10A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For low speed high current switching industrial use.

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