2SD1670 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 1000( Min.) @ IC= 10A ·Low Collector Saturation Voltage-.
Power Transistor
| Part number | 2SD1670 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.21 KB |
| Description | Power Transistor |
| Datasheet | 2SD1670_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 1000( Min.) @ IC= 10A ·Low Collector Saturation Voltage-.
| Part Number | Description |
|---|---|
| 2SD1601 | Power Transistor |
| 2SD1602 | Power Transistor |
| 2SD1604 | Power Transistor |
| 2SD1605 | Power Transistor |
| 2SD1606 | Silicon NPN Power Transistor |
| 2SD1608 | Power Transistor |
| 2SD1640 | Silicon NPN Power Transistor |
| 2SD1646 | Power Transistor |
| 2SD1653 | Power Transistor |
| 2SD1656 | Power Transistor |