Datasheet Details
| Part number | 2SD1680 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.88 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1680-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1680 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.88 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1680-INCHANGE.pdf |
|
|
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·Collector-Base Breakdown Voltage- : V(BR)CBO= 330V(Min) ·High Power Dissipation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCES Collector-Emitter Voltage 330 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICP Collector Current-Pulse ICP Collector Current-Pulse (unrepetitive) PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 10 A 15 A 70 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD1680 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1680 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 200 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1680 | SILICON POWER TRANSISTOR | SavantIC |
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