Inchange Semiconductor 2SD1680
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD1680 |
|---|---|
| Datasheet | 2SD1680 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Base Breakdown Voltage- : V(BR)CBO= 330V(Min)●High Power Dissipation
●High Speed Switching
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCES Collector-Emitter Voltage 330 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICP Collector Current-Pulse ICP Collector Current-Pulse (unrepetitive) PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 10 A 15 A 70 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD1680 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1680ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 200 V VCE(sat) Collector-Emitter Saturati...