SavantIC 2SD1680
SILICON POWER TRANSISTOR
DESCRIPTION
●With TO-3PFa package●High speed switching
●High VCBO
●Large collector power dissipation
APPLICATIONS
●For horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base EmitterDESCRIPTION
Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 70 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 330 200 6 7 10 3 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Fall time CONDITIONS IC=30mA ;IB...