Inchange Semiconductor 2SD1684
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD1684 |
|---|---|
| Datasheet | 2SD1684 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●●Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -0.5A●Wide Area of Safe Operation
●Complement to Type 2SB1144
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for 100V/1.5A SwitchingAPPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.5 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2 A 10 W 1.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1684 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 10uA; IE= 0 V(BR)EBO Emitter-Base Break...