Sanyo Electric 2Sd1684
PNP/NPN Epitaxial Planar Silicon Transistors
APPLICATIONS
FEATURES
● Adoption of FBET and MBIT processes.● High breakdown voltage.
● Low saturation voltage.
● Plastic-covered heat sink facilitating high-density mounting. Package Dimensions unit:mm 2042B [2SB1144/2SD1684] ( ) : 2SB1144 1 : Emitter 2 : Collector 3 : Base Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Tc=25˚C Conditions SANYO : TO-126ML Ratings (–)120 (–)100 (–)6 (–)1.5 (–)2.0 1.5 10 150 –55 to +150 Unit V V V A A W W ˚C ˚CELECTRICAL CHARACTERISTICS
at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol Conditions ICBO IEBO hFE1 hFE2 fT VCB=(–)100V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)100mA VCE=(–)5V, IC=(–)1A VCE=(–)10V, IC=(–)50mA Output Capacitance Cob VCB=(–)1...