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2SD1772 - NPN Transistor

Datasheet Summary

Description

High Power Dissipation High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) Complement to Type 2SB1192 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Power amplifier applications.

TV vertical deflection output

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Datasheet Details

Part number 2SD1772
Manufacturer INCHANGE
File Size 210.95 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·Complement to Type 2SB1192 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature 2 A 25 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1772 isc website：www.iscsemi.
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