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2SD1772 - Silicon NPN Transistor

Key Features

  • 1:Base 2:Collector 3:Emitter TO.
  • 220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1772 2SD1772A (TC=25˚C) Symbol ICBO IEBO VCEO VEBO hFE1.
  • hFE2 VBE VCE(sat) fT Cob Conditions VCB = 200V, IE = 0 VEB = 4V, IC = 0 IC = 5mA, IB = 0 IE = 0.5mA, IC = 0 VCE = 10V, IC = 100mA VCE = 10V, IC = 300mA VCE = 10V, IC = 300mA IC = 500mA, IB = 50mA VCE = 10V, IC = 100mA, f = 1MHz VCB = 10V, IE = 0, f = 1.

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Datasheet Details

Part number 2SD1772
Manufacturer Panasonic
File Size 45.29 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD1772 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SD1772, 2SD1772A Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Complementary to 2SB1192 and 2SB1192A Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 q q Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 200 200 150 180 6 2 1 25 2 150 –55 to +150 Unit V 16.7±0.3 14.0±0.