Inchange Semiconductor 2SD1803
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD1803 |
|---|---|
| Datasheet | 2SD1803 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | TO-126 Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector Current-IC= 5.0A●Low Saturation Voltage - : VCE(sat)= 0.4V(Max)@ IC= 3.0A, IB= 0.15A
●Good Linearity of hFE
●Complement to Type 2SB1203
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Relay drivers,high-speed inverters,converters, and other general high-current switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5.0 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8.0 A 1.0 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1803 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 3.0A; IB= 0.1...