Inchange Semiconductor 2SD1857
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | 2SD1857 |
|---|---|
| Datasheet | 2SD1857 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High breakdown voltage. (BVCEO = 120V)●Low collector output capacitance.
●High transition frequency. (fT = 50MHz)
●Complement to Type 2SB1236
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for audio amplifier, voltage regulator, and general purpose power amplifiers.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICP Collector Current-Pulse 3 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1857 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A ICBO Collector Cu...