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2SD1857 - POWER TRANSISTOR

General Description

, at any time and without notice.

This document supersedes and replaces all information supplied prior to the publication hereof.

Key Features

  • S.
  • High breakdown voltage. (BVCEO=120V).
  • Low collector output capacitance. (Typ.20pF at VCB=10V).
  • High transition frequency. (fT=80MHz).

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Full PDF Text Transcription (Reference)

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UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR  FEATURES * High breakdown voltage.(BVCEO=120V) * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.