Inchange Semiconductor 2SD188
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD188 |
|---|---|
| Datasheet | 2SD188 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
With TO-3 package●Large current capability
●Wide area of safe operation
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●For audio frequency output applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=75℃ TJ Junction Temperature 7 A 60 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD188 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorsELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=5A ; IB=0.5A VBEsat Base-emitter saturation voltage IC=5A ; IB=0.5A ICBO...