Datasheet Details
| Part number | 2SD1899-K |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.74 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1899-K-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistors.
| Part number | 2SD1899-K |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.74 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1899-K-INCHANGE.pdf |
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·Low Collector Saturation Voltage ·High Power Dissipation- : PC= 10W(Max)@TC=25℃ ·Complement to Type 2SB1261-K ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier and switching, especially in hybrid integrated circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 3 A 10 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD1899-K isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 100μA ;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD1899-K | NPN Transistor | MCC |
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2SD1899-L | NPN Transistor | MCC |
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2SD1899-M | NPN Transistor | MCC |
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2SD1899-Z | NPN Silicon Epitaxial Transistor | Kexin |
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2SD1899-Z | Silicon NPN Power Transistor | Inchange Semiconductor |
| Part Number | Description |
|---|---|
| 2SD1890 | NPN Transistor |
| 2SD1891 | NPN Transistor |
| 2SD1892 | NPN Transistor |
| 2SD1893 | NPN Transistor |
| 2SD1894 | NPN Transistor |
| 2SD1895 | NPN Transistor |
| 2SD1897 | NPN Transistor |
| 2SD1803 | TO-252 NPN Transistor |
| 2SD1804 | NPN Transistor |
| 2SD1804-T | NPN Transistor |