Low collector saturation voltage
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
High transition frequency applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base V
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isc Silicon NPN Power Transistor
DESCRIPTION ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High transition frequency applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
3
A
1.0
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD1899-Z
isc website：www.iscsemi.
2SD1899-Z Datasheet
