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2SD1899-Z - NPN Transistor

Key Features

  • High hFE.
  • Low VCE(sat).

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Datasheet Details

Part number 2SD1899-Z
Manufacturer VSEEI
File Size 765.84 KB
Description NPN Transistor
Datasheet download datasheet 2SD1899-Z Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SD1899-Z-T1 Shenzhen VSEEI Semiconductor Co., Ltd 2SD1899-Z TRANSISTOR (NPN) FEATURES  High hFE  Low VCE(sat) MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Operation Junction and Storage Temperature Range Value Unit 60 V 60 V 7 V 3 A 1 W -55-150 ℃ TO-251 1.BASE 2.COLLECTOR 3.