2SD1899-Z - NPN Transistor

NEC (now Renesas Electronics)

General Description

Switching, especially in Hybrid Integrated Circuits.

Key Features

High hFE: hFE = 100 to 400.
Low VCE(sat): VCE(sat) ≤ 0.25 V.

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2SD1899-Z npn transistor by NEC (now Renesas Electronics) - Datasheet Preview

Datasheet Details

Part number	2SD1899-Z
Manufacturer	NEC (now Renesas Electronics)
File Size	1.24 MB
Description	NPN Transistor
Datasheet	2SD1899-Z Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON POWER TRANSISTOR 2SD1899-Z NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SD1899-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High hFE: hFE = 100 to 400 • Low VCE(sat): VCE(sat) ≤ 0.25 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage Base to Emitter Voltage Collector Current (DC) Collector Current (pulse) Note 1 Base Current (DC) Total Power Dissipation (TA = 25°C) Note 2 Total Power Dissipation (TC = 25°C) Junction Temperature Storage Temperature VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT1 PT2 Tj Tstg 60 60 7.0 3.0 5.0 0.5 2.0 10 150 −55 to +150 V V V A A A W W °C °C Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2. When mounted on ceramic substrate of 7.