2SD1933 datasheet by Inchange Semiconductor.
| Part number | 2SD1933 |
|---|---|
| Datasheet | 2SD1933-INCHANGE.pdf |
| File Size | 208.67 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= 3V, IC= 2A) ·plement to Type 2SB1342 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1933 | SILICON POWER TRANSISTOR | SavantIC |
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