Datasheet Details
| Part number | 2SD1933 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.67 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1933-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Darlington Power Transistor 2SD1933.
| Part number | 2SD1933 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.67 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1933-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= 3V, IC= 2A) ·Complement to Type 2SB1342 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 6 A 2 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1933 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1933 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD1910 | NPN Transistor |
| 2SD1911 | NPN Transistor |
| 2SD1913 | NPN Transistor |
| 2SD1923 | NPN Transistor |
| 2SD1940 | NPN Transistor |
| 2SD1941 | NPN Transistor |
| 2SD1958 | NPN Transistor |
| 2SD1959 | NPN Transistor |
| 2SD1966 | NPN Transistor |
| 2SD1975 | NPN Transistor |