2SD1933 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= 3V, IC= 2A) ·plement to Type 2SB1342 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.