2SD1932 datasheet by Inchange Semiconductor.
| Part number | 2SD1932 |
|---|---|
| Datasheet | 2SD1932_InchangeSemiconductor.pdf |
| File Size | 210.19 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Power Transistor |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= 3V, IC= 2A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
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