Datasheet Details
| Part number | 2SD1932 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.19 KB |
| Description | Power Transistor |
| Datasheet | 2SD1932_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD1932 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.19 KB |
| Description | Power Transistor |
| Datasheet | 2SD1932_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= 3V, IC= 2A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 6 A 2 W 40 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD1932 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark ' isc Silicon NPN Darlington Power Transistor 2SD1932 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
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