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2SD1980

Manufacturer: Inchange Semiconductor

2SD1980 datasheet by Inchange Semiconductor.

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2SD1980 Datasheet Details

Part number 2SD1980
Datasheet 2SD1980-InchangeSemiconductor.pdf
File Size 216.42 KB
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
2SD1980 page 2

2SD1980 Overview

1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1980 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base breakdown voltage IC=50uA BVCEO Collector-Emitter breakdown voltage IC=5mA BVEBO Emitter-Base breakdown voltage IE=5mA VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 1mA ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current...

2SD1980 from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Rohm Logo 2SD1980 Power Transistor Rohm
Inchange Semiconductor logo - Manufacturer

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