2SD1980 Description
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1980 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base breakdown voltage IC=50uA BVCEO Collector-Emitter breakdown voltage IC=5mA BVEBO Emitter-Base breakdown voltage IE=5mA VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 1mA ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current...